пятница, 25 апреля 2014 г.

Plan of the Course


NOTE: References lead to illustrative materials for the unit.


Units
Topics
1
Introduction. Types of impact. Classification of catastrophic and non-catastrophic failures (hard and soft errors). Materials
2
Physical mechanisms leading to TID in a bulk and SOI MOSFET. TID modelling in a standard VLSI design roadmap.
3
Physical processes in a bulk and SOI MOSFET during a strike of single charged particle. Linear Energy Transfer (LET), error cross-section, fluence, flux. Estimation of saturation cross-section using layout features.
4
The sources of upsets and catastrophic failures in space. Space weather. Natural and artificial radiation belts (Van Allen belts). Classification of spacecraft orbits. Materials
5
Single Event Effects modelling in a standard VLSI design roadmap. The synergy between SEE and TID in CMOS SRAM.
6
TID and SEE in perspective nano-scale double-gate transistors, FinFETs.
7
Hardness assurance. Modeling and imitation tools.
8
Radiation Hardening-by-Process and by-Design methods for TID effects.
9
Radiation Hardening-by-Process and by-Design methods for catastrophic SEE.
10
Architecture and design methods for soft radiation effects.
11
Layout and process-based methods for soft radiation effects.
12
Silicon-on-Insulator technology. Special methods for TID and SEE.
13
Error Correction Codes (ECC).
14
The influence of scaling to SEE and TID sensitivity


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