NOTE: References lead to illustrative materials for the unit.
Units
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Topics
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1
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Introduction. Types of impact. Classification of catastrophic and non-catastrophic failures (hard and soft errors). Materials
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2
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Physical mechanisms leading to TID in a bulk and SOI MOSFET. TID modelling in a standard VLSI design roadmap.
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3
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Physical processes in a bulk and SOI MOSFET during a strike of single charged particle. Linear Energy Transfer (LET), error cross-section, fluence, flux. Estimation of saturation cross-section using layout features.
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4
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The sources of upsets and catastrophic failures in space. Space weather. Natural and artificial radiation belts (Van Allen belts). Classification of spacecraft orbits. Materials
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5
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Single Event Effects modelling in a standard VLSI design roadmap. The synergy between SEE and TID in CMOS SRAM.
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6
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TID and SEE in perspective nano-scale double-gate transistors, FinFETs.
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7
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Hardness assurance. Modeling and imitation tools.
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8
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Radiation Hardening-by-Process and by-Design methods for TID effects.
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9
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Radiation Hardening-by-Process and by-Design methods for catastrophic SEE.
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10
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Architecture and design methods for soft radiation effects.
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11
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Layout and process-based methods for soft radiation effects.
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12
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Silicon-on-Insulator technology. Special methods for TID and SEE.
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13
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Error Correction Codes (ECC).
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14
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The influence of scaling to SEE and TID sensitivity
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